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IRFB3607PBF
Details
Manufacturer No IRFB3607PBF
Manufacturer International Rectifier
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Price
$1.294
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
2909
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN OVER NICKEL
Part Package Code
TO-220AB
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
80 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
75 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
140 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
80 A
Avalanche Energy Rating (Eas)
120 mJ
Drain-source On Resistance-Max
0.009 Ω
Pulsed Drain Current-Max (IDM)
310 A
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Qty
Unit Price
Total Price
1
$1.25518
$1.25518
50
$1.19048
$59.524
100
$1.15166
$115.166
1000
$1.0999
$1099.9
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