IRFB3207ZGPBF

Details

Manufacturer No IRFB3207ZGPBF

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package TO-220-3

Datasheet Datasheet

Description MOSFET N-CH 75V 120A TO220AB

Price

$1.48

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Type

Parameter

Mfr

Infineon Technologies
Series

HEXFET®
Package

Bulk
FET Type

N-Channel
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
FET Feature

-
Mounting Type

Through Hole
Package / Case

TO-220-3
Product Status

Last Time Buy
Vgs(th) (Max) @ Id

4V @ 150µA
Base Product Number

IRFB3207
Operating Temperature

-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs

4.1mOhm @ 75A, 10V
Power Dissipation (Max)

300W (Tc)
Supplier Device Package

TO-220AB
Gate Charge (Qg) (Max) @ Vgs

170 nC @ 10 V
Drain to Source Voltage (Vdss)

75 V
Input Capacitance (Ciss) (Max) @ Vds

6920 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)

10V
Current - Continuous Drain (Id) @ 25°C

120A (Tc)

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Qty

Unit Price

Total Price

$1.4356

$1.3616

$68.08

100

$1.3172

$131.72

1000

$1.258

$1258

Substitute Products

IRFB3207ZGPBF

International Rectifier

Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

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IRFB3207ZPBF

International Rectifier

Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

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