Details
Manufacturer No IRF8010STRL
Manufacturer International Rectifier
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Popularity
11
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
310 mJ
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Drain-source On Resistance-Max
0.015 Ω
Pulsed Drain Current-Max (IDM)
320 A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Qty
Unit Price
Total Price
16809
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