IRF8010SPBF

Details

Manufacturer No IRF8010SPBF

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Datasheet Datasheet

Description MOSFET N-CH 100V 80A D2PAK

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Type

Parameter

Mfr

Infineon Technologies
Series

HEXFET®
Package

Tube
FET Type

N-Channel
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
FET Feature

-
Mounting Type

Surface Mount
Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status

Discontinued at Digi-Key
Vgs(th) (Max) @ Id

4V @ 250µA
Operating Temperature

-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs

15mOhm @ 45A, 10V
Power Dissipation (Max)

260W (Tc)
Supplier Device Package

D2PAK
Gate Charge (Qg) (Max) @ Vgs

120 nC @ 10 V
Drain to Source Voltage (Vdss)

100 V
Input Capacitance (Ciss) (Max) @ Vds

3830 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)

10V
Current - Continuous Drain (Id) @ 25°C

80A (Tc)

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Qty

Unit Price

Total Price

9038

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