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IRF4104PBF

Details

Manufacturer No IRF4104PBF

Manufacturer Infineon Technologies

Category MOSFET

Package TO-220-3

Datasheet Datasheet

Description MOSFET MOSFT 40V 120A 5.5mOhm 68nC Qg

Price

$2.1

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Type

Parameter

  • RoHS

    Details

  • Brand

    Infineon Technologies

  • Width

    4.4 mm

  • Height

    15.65 mm

  • Length

    10 mm

  • Packaging

    Tube

  • Technology

    Si

  • Subcategory

    MOSFETs

  • Unit Weight

    0.068784 oz

  • Channel Mode

    Enhancement

  • Manufacturer

    Infineon

  • Product Type

    MOSFET

  • Configuration

    Single

  • Mounting Style

    Through Hole

  • Package / Case

    TO-220-3

  • Transistor Type

    1 N-Channel

  • Product Category

    MOSFET

  • Qg - Gate Charge

    68 nC

  • Number of Channels

    1 Channel

  • Transistor Polarity

    N-Channel

  • Pd - Power Dissipation

    140 W

  • Vgs - Gate-Source Voltage

    - 20 V, + 20 V

  • Id - Continuous Drain Current

    120 A

  • Maximum Operating Temperature

    175°C

  • Minimum Operating Temperature

    -55°C

  • Rds On - Drain-Source Resistance

    5.5 mOhms

  • Vds - Drain-Source Breakdown Voltage

    40 V

  • Vgs th - Gate-Source Threshold Voltage

    4 V

  • Factory Pack Quantity: Factory Pack Quantity

    1000

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Qty

Unit Price

Total Price

1

$2.037

$2.037

50

$1.932

$96.6

100

$1.869

$186.9

1000

$1.785

$1785

Substitute Products

IRF4104

International Rectifier

Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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IRF4104PBF

Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

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CSD18511KCS

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AUIRF4104

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IRF4104

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IRFR014

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MOSFET N-CH 60V 7.7A DPAK

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