IRF2907ZLPBF

Details

Manufacturer No IRF2907ZLPBF

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package TO-262-3 Long Leads, I²Pak, TO-262AA

Datasheet Datasheet

Description MOSFET N-CH 75V 160A TO262

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Type

Parameter

Mfr

Infineon Technologies
Series

HEXFET®
Package

Tube
FET Type

N-Channel
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
FET Feature

-
Mounting Type

Through Hole
Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status

Obsolete
Vgs(th) (Max) @ Id

4V @ 250µA
Operating Temperature

-55°C~175°C(TJ)
Rds On (Max) @ Id, Vgs

4.5mOhm @ 75A, 10V
Power Dissipation (Max)

300W (Tc)
Supplier Device Package

TO-262
Gate Charge (Qg) (Max) @ Vgs

270 nC @ 10 V
Drain to Source Voltage (Vdss)

75 V
Input Capacitance (Ciss) (Max) @ Vds

7500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)

10V
Current - Continuous Drain (Id) @ 25°C

160A (Tc)

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Qty

Unit Price

Total Price

2814

call

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IRF2907ZPBF

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IRF2907ZPBF

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TO-220AB N-CH 75V 170A

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AUIRF2907Z

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IRF2907Z

International Rectifier

Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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IRF2907ZPBF

International Rectifier

Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

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AUIRF2907Z

Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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