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IRF2907Z
Details
Manufacturer No IRF2907Z
Manufacturer 英飞凌-Infineon
Category 61V-150V NMOS
Datasheet Datasheet
Description 75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装
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Type
Parameter
OPN
IRF2907ZPBF
VDS max
75 V
VGS(th)
3 V
Polarity
N
Technology
IR MOSFET™
QG typ @10V
180 nC
VGS(th) max
4 V
VGS(th) min
2 V
Package name
TO220
QG typ @4.5V
Qualification
Non-Automotive
ID @25°C max
170 A
Product Status
active
Special Features
RDS (on) @10V max
4.5 mΩ
RDS (on) @4.5V max
Operating Temperature max
Operating Temperature min
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Qty
Unit Price
Total Price
19599
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Substitute Products
IRF2907ZPBF
International Rectifier
Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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AUIRF2907Z
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
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IXUV170N075
Ixys
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IRF2907ZLPBF
International Rectifier
Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
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