Details
Manufacturer No IRF1404ZL
Manufacturer International Rectifier
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
No
Popularity
74
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Part Package Code
TO-262AA
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Number of Elements
1
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
40 V
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
220 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
190 A
Avalanche Energy Rating (Eas)
480 mJ
Drain-source On Resistance-Max
0.0037 Ω
Pulsed Drain Current-Max (IDM)
750 A
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Qty
Unit Price
Total Price
16675
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