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IRF1404Z
Details
Manufacturer No IRF1404Z
Manufacturer 英飞凌-Infineon
Category 31V-60V NMOS
Datasheet Datasheet
Description 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装
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Type
Parameter
OPN
IRF1404ZPBF
VDS max
40 V
VGS(th)
3 V
Polarity
N
Technology
IR MOSFET™
QG typ @10V
100 nC
VGS(th) max
4 V
VGS(th) min
2 V
Package name
TO220
QG typ @4.5V
Qualification
Non-Automotive
ID @25°C max
180 A
Product Status
active
Special Features
RDS (on) @10V max
3.7 mΩ
RDS (on) @4.5V max
Operating Temperature max
Operating Temperature min
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Qty
Unit Price
Total Price
5542
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call
Substitute Products
IRF1404
Infineon
TO-220AB N-CH 40V 202A
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AUIRF1404
Infineon
TO-220AB N-CH 40V 202A
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AUIRF1404Z
Infineon
TO-220AB N-CH 40V 180A
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STP200NF04
St
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AUIRF1404Z
International Rectifier
Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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IRF1404ZL
International Rectifier
Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
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AUIRF1404
International Rectifier
Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
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AUIRF1404ZL
Infineon Technologies AG
Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN
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IRF1404PBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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IRF1404
International Rectifier
Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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