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IPP023NE7N3GXKSA1

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Manufacturer No IPP023NE7N3GXKSA1

Manufacturer Infineon Technologies AG

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Price

$5.12

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Rohs Code

    Yes

  • Popularity

    160

  • Pbfree Code

    Yes

  • JESD-30 Code

    R-PSFM-T3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-220AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    THROUGH-HOLE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Finish

    TIN

  • Part Package Code

    TO-220AB

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Source Content uid

    IPP023NE7N3GXKSA1

  • Number of Terminals

    3

  • Package Description

    FLANGE MOUNT, R-PSFM-T3

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    120 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    75 V

  • Operating Temperature-Max

    175°C

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    1100 mJ

  • Drain-source On Resistance-Max

    0.0023 Ω

  • Pulsed Drain Current-Max (IDM)

    480 A

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Qty

Unit Price

Total Price

1

$4.9664

$4.9664

50

$4.7104

$235.52

100

$4.5568

$455.68

1000

$4.352

$4352

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