Details
Manufacturer No IPI023NE7N3GAKSA1
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
0
Pbfree Code
No
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Part Package Code
TO-262AA
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
IPI023NE7N3GAKSA1
Number of Terminals
3
Package Description
IN-LINE, R-PSIP-T3
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
120 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
75 V
Operating Temperature-Max
175°C
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
1100 mJ
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Drain-source On Resistance-Max
0.0023 Ω
Pulsed Drain Current-Max (IDM)
480 A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Qty
Unit Price
Total Price
6104
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