Details
Manufacturer No IPI086N10N3G
Manufacturer Infineon Technologies AG
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
168
Pbfree Code
Yes
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN
Part Package Code
TO-262AA
Terminal Position
SINGLE
Number of Elements
1
Source Content uid
IPI086N10N3G
Number of Terminals
3
Package Description
GREEN, PLASTIC, TO-262, 3 PIN
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
80 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
175°C
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
80 A
Avalanche Energy Rating (Eas)
110 mJ
Drain-source On Resistance-Max
0.0086 Ω
Pulsed Drain Current-Max (IDM)
320 A
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Qty
Unit Price
Total Price
13614
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