FZT853TC

Details

Manufacturer No FZT853TC

Manufacturer Zetex / Diodes Inc

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,

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Type

Parameter

HTS Code

8541.29.00.75
ECCN Code

EAR99
Rohs Code

Yes
Popularity

3
VCEsat-Max

0.34 V
JESD-30 Code

R-PDSO-G4
Configuration

SINGLE
JESD-609 Code

e3
Package Shape

RECTANGULAR
Package Style

SMALL OUTLINE
Surface Mount

YES
Terminal Form

GULL WING
Case Connection

COLLECTOR
Terminal Finish

MATTE TIN
Terminal Position

DUAL
Number of Elements

1
Number of Terminals

4
Part Life Cycle Code

Obsolete
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

NPN
Reach Compliance Code

not_compliant
Transistor Application

SWITCHING
DC Current Gain-Min (hFE)

100
Operating Temperature-Max

150°C
Collector Current-Max (IC)

6 A
Moisture Sensitivity Level

1
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

100 V
Peak Reflow Temperature (Cel)

260
Power Dissipation Ambient-Max

3 W
Transition Frequency-Nom (fT)

130 MHz
Time@Peak Reflow Temperature-Max (s)

40

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Qty

Unit Price

Total Price

14658

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