FZT788BTC

Details

Manufacturer No FZT788BTC

Manufacturer Diodes Incorporated

Category Single BJT Transistors

Datasheet Datasheet

Description

Price

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Type

Parameter

  • Mfr

  • RoHS

    yes

  • Mount

    Surface Mount

  • Width

    3.7mm

  • Height

    1.65mm

  • Length

    6.7mm

  • Pbfree

  • Series

  • Weight

    7.994566mg

  • Current

  • Package

  • Voltage

  • hFE Min

  • HTS Code

    8541.29.00.75

  • Polarity

  • ECCN Code

    EAR99

  • Frequency

  • Inventory

    14923

  • Lead Free

    Lead Free

  • Packaging

    Tape & Reel (TR)

  • Pin Count

  • Published

    2006

  • REACH SVHC

    No SVHC

  • Part Status

    Obsolete

  • Power - Max

  • RoHS Status

    ROHS3 Compliant

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PDSO-G4

  • Configuration

  • JESD-609 Code

    e3

  • Mounting Type

    Surface Mount

  • Terminal Form

    GULL WING

  • Current Rating

    -3A

  • Number of Pins

  • Package / Case

    TO-261-4, TO-261AA

  • Product Status

  • Case Connection

    COLLECTOR

  • Contact Plating

  • Terminal Finish

    Matte Tin (Sn)

  • Transistor Type

    PNP

  • Base Part Number

    FZT788

  • Factory Lead Time

  • Power Dissipation

  • Terminal Position

    DUAL

  • Additional Feature

  • Number of Elements

    1

  • Reference Standard

  • Voltage - Rated DC

    -15V

  • Radiation Hardening

  • Qualification Status

    Not Qualified

  • Transition Frequency

    100MHz

  • Element Configuration

    Single

  • Max Breakdown Voltage

  • Max Collector Current

    3A

  • Max Power Dissipation

    2W

  • Operating Temperature

    -55°C~150°CTJ

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    not_compliant

  • Frequency - Transition

  • Gain Bandwidth Product

    100MHz

  • Number of Terminations

    4

  • Transistor Application

    SWITCHING

  • Supplier Device Package

  • Max Operating Temperature

  • Min Operating Temperature

  • Emitter Base Voltage (VEBO)

    -5V

  • Transistor Element Material

    SILICON

  • Continuous Collector Current

  • Collector Base Voltage (VCBO)

    -15V

  • Peak Reflow Temperature (Cel)

    260

  • Vce Saturation (Max) @ Ib, Ic

    500mV @ 50mA, 3A

  • Current - Collector (Ic) (Max)

    3A

  • Collector Emitter Voltage (VCEO)

    500mV

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Collector Emitter Breakdown Voltage

    15V

  • Collector Emitter Saturation Voltage

    -500mV

  • Time@Peak Reflow Temperature-Max (s)

    30

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    500 @ 10mA 2V

  • Voltage - Collector Emitter Breakdown (Max)

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Qty

Unit Price

Total Price

30460

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call

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