Details
Manufacturer No FX70VSJ-03
Manufacturer Mitsubishi Electric
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 70A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Price
Call
Type
Parameter
Objectid
1466606213
ECCN Code
EAR99
Risk Rank
9.49
Subcategory
Other Transistors
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Reach Compliance Code
unknown
Drain Current-Max (ID)
70 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
70 A
Drain-source On Resistance-Max
0.0123 Ω
Pulsed Drain Current-Max (IDM)
280 A
Send RFQ
Qty
Unit Price
Total Price
3850
call
call
As a leader in the electronic components industry, we are committed to providing the most comprehensive and accurate electronic component information and supplier prices.
Payment Method