Details
Manufacturer No BUK9612-55B,118
Manufacturer NXP
Category Power Field-Effect Transistors
Datasheet Datasheet
Description N-channel TrenchMOS logic level FET D2PAK 3-Pin
Price
$2.07
Type
Parameter
HTS Code
8541.29.00.75
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Brand Name
NXP Semiconductor
Popularity
326
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Part Package Code
D2PAK
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Source Content uid
BUK9612-55B,118
Number of Terminals
2
Package Description
PLASTIC, D2PAK-3
Part Life Cycle Code
Transferred
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Manufacturer Package Code
SOT404
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
157 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
79 A
Avalanche Energy Rating (Eas)
172 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.0133 Ω
Pulsed Drain Current-Max (IDM)
322 A
Time@Peak Reflow Temperature-Max (s)
30
Send RFQ
Qty
Unit Price
Total Price
1
$2.0079
$2.0079
50
$1.9044
$95.22
100
$1.8423
$184.23
1000
$1.7595
$1759.5
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