BUK9612-55B

Details

Manufacturer No BUK9612-55B

Manufacturer Nexperia

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 75A I(D), 55V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Type

Parameter

  • ECCN Code

    EAR99

  • Rohs Code

    Yes

  • Popularity

    0

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Date Of Intro

    1997-09-16

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    TIN

  • Terminal Position

    SINGLE

  • Additional Feature

    LOGIC LEVEL COMPATIBLE

  • Number of Elements

    1

  • Reference Standard

    AEC-Q101

  • Source Content uid

    BUK9612-55B

  • Number of Terminals

    2

  • Package Description

    SMALL OUTLINE, R-PSSO-G2

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    not_compliant

  • Drain Current-Max (ID)

    75 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    55 V

  • Operating Temperature-Max

    175°C

  • Moisture Sensitivity Level

    1

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    172 mJ

  • Peak Reflow Temperature (Cel)

    245

  • Drain-source On Resistance-Max

    0.0133 Ω

  • Pulsed Drain Current-Max (IDM)

    322 A

  • Time@Peak Reflow Temperature-Max (s)

    30

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Qty

Unit Price

Total Price

3070

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