Details
Manufacturer No BUK9612-55B
Manufacturer Nexperia
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 75A I(D), 55V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Price
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Type
Parameter
ECCN Code
EAR99
Rohs Code
Yes
Popularity
0
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Date Of Intro
1997-09-16
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Reference Standard
AEC-Q101
Source Content uid
BUK9612-55B
Number of Terminals
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175°C
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
172 mJ
Peak Reflow Temperature (Cel)
245
Drain-source On Resistance-Max
0.0133 Ω
Pulsed Drain Current-Max (IDM)
322 A
Time@Peak Reflow Temperature-Max (s)
30
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Qty
Unit Price
Total Price
3070
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