BN1F4Z-P

Details

Manufacturer No BN1F4Z-P

Manufacturer Renesas Electronics Corporation

Category Small Signal Bipolar Transistors

Datasheet Datasheet

Description 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR

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Type

Parameter

Objectid

1801221675
ECCN Code

EAR99
Risk Rank

9.46
Subcategory

BIP General Purpose Small Signal
JESD-30 Code

R-PSIP-T3
Configuration

SINGLE WITH BUILT-IN RESISTOR
Package Shape

RECTANGULAR
Package Style

IN-LINE
Surface Mount

NO
Terminal Form

THROUGH-HOLE
Terminal Position

SINGLE
Additional Feature

BUILT-IN BIAS RESISTOR
Number of Elements

1
Source Content uid

BN1F4Z-P
Number of Terminals

3
Package Description

IN-LINE, R-PSIP-T3
Part Life Cycle Code

Obsolete
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

PNP
Reach Compliance Code

unknown
Transistor Application

SWITCHING
Turn-on Time-Max (ton)

200 ns
Turn-off Time-Max (toff)

6000 ns
DC Current Gain-Min (hFE)

200
Operating Temperature-Max

150°C
Collector Current-Max (IC)

0.1 A
Power Dissipation-Max (Abs)

0.25 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

50 V

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Qty

Unit Price

Total Price

19579

call

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