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BDP950-E6433

Details

Manufacturer No BDP950-E6433

Manufacturer Infineon Technologies AG

Category RF Power Bipolar Transistors

Datasheet Datasheet

Description RF Power Bipolar Transistor, 1-Element, Silicon, PNP,

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Type

Parameter

  • YTEOL

    3.5

  • Objectid

    1537680387

  • ECCN Code

    EAR99

  • Risk Rank

    6.96

  • Rohs Code

    No

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PDSO-G4

  • Configuration

    SINGLE

  • JESD-609 Code

    e0

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • Case Connection

    COLLECTOR

  • Terminal Finish

    TIN LEAD

  • Terminal Position

    DUAL

  • Number of Elements

    1

  • Source Content uid

    BDP950-E6433

  • Number of Terminals

    4

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    PNP

  • Reach Compliance Code

    not_compliant

  • Transistor Application

    AMPLIFIER

  • DC Current Gain-Min (hFE)

    85

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    3 A

  • Power Dissipation-Max (Abs)

    3 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    60 V

  • Transition Frequency-Nom (fT)

    100 MHz

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Qty

Unit Price

Total Price

4177

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