Details
Manufacturer No BDP950-E6327
Manufacturer Infineon Technologies AG
Category RF Power Bipolar Transistors
Datasheet Datasheet
Description RF Power Bipolar Transistor, 1-Element, Silicon, PNP
Price
$7.9697
Type
Parameter
Objectid
1537680384
ECCN Code
EAR99
Risk Rank
8.6
Rohs Code
Yes
Pbfree Code
No
Subcategory
Other Transistors
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
DUAL
Number of Elements
1
Source Content uid
BDP950-E6327
Number of Terminals
4
Package Description
SMALL OUTLINE, R-PDSO-G4
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Reach Compliance Code
compliant
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
85
Operating Temperature-Max
150°C
Collector Current-Max (IC)
3 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
3 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
60 V
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
100 MHz
Send RFQ
Qty
Unit Price
Total Price
1
$7.73061
$7.73061
50
$7.33212
$366.606
100
$7.09303
$709.303
1000
$6.77425
$6774.25
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