SQD50N02-04-GE3

Details

Manufacturer No SQD50N02-04-GE3

Manufacturer Vishay

Category Single MOSFETs Transistors

Datasheet Datasheet

Description

Price

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Type

Parameter

  • RoHS

  • Mount

  • Width

  • Height

  • Length

  • Pbfree

  • Series

  • Weight

  • FET Type

  • ECCN Code

  • Inventory

    15961

  • Lead Free

  • Packaging

  • Pin Count

  • Published

  • Rise Time

  • Vgs (Max)

  • REACH SVHC

  • Rds On Max

  • Resistance

  • Technology

  • Nominal Vgs

  • Part Status

  • RoHS Status

  • Subcategory

  • JESD-30 Code

  • Configuration

  • Mounting Type

  • Terminal Form

  • Number of Pins

  • Operating Mode

  • Package / Case

  • Case Connection

  • Contact Plating

  • Fall Time (Typ)

  • Factory Lead Time

  • Input Capacitance

  • Power Dissipation

  • Terminal Position

  • Threshold Voltage

  • Number of Channels

  • Number of Elements

  • Turn On Delay Time

  • Vgs(th) (Max) @ Id

  • Radiation Hardening

  • Turn-Off Delay Time

  • Element Configuration

  • Max Power Dissipation

  • Operating Temperature

  • Power Dissipation-Max

  • Reach Compliance Code

  • Number of Terminations

  • Rds On (Max) @ Id, Vgs

  • Supplier Device Package

  • DS Breakdown Voltage-Min

  • Max Operating Temperature

  • Min Operating Temperature

  • Drain to Source Resistance

  • Transistor Element Material

  • Gate Charge (Qg) (Max) @ Vgs

  • Gate to Source Voltage (Vgs)

  • Avalanche Energy Rating (Eas)

  • Continuous Drain Current (ID)

  • Max Junction Temperature (Tj)

  • Peak Reflow Temperature (Cel)

  • Drain to Source Voltage (Vdss)

  • Drain-source On Resistance-Max

  • Pulsed Drain Current-Max (IDM)

  • Moisture Sensitivity Level (MSL)

  • Drain to Source Breakdown Voltage

  • Input Capacitance (Ciss) (Max) @ Vds

  • Time@Peak Reflow Temperature-Max (s)

  • Drive Voltage (Max Rds On,Min Rds On)

  • Current - Continuous Drain (Id) @ 25°C

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Qty

Unit Price

Total Price

32310

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