2SC3663

Details

Manufacturer No 2SC3663

Manufacturer 日电-NEC

Category Uncategorized

Datasheet Datasheet

Description NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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Total Price

6169

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Substitute Products

2SC3663

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2SC3663

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NE85639R-T1

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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, 39R, 4 PIN

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2SC3603

NEC Electronics America Inc

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN,

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2SC4839

Toshiba America Electronic Components

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP RF Small Signal

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2SC2149

NEC Electronics America Inc

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN,

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2SC5092

Toshiba America Electronic Components

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2SC4185

NEC Electronics Group

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KSP5179

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NE73416

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2SC3603

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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, S Band, Silicon, NPN

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NE02135

NEC Electronics America Inc

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NE02130-T1

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NE73400

California Eastern Laboratories (CEL)

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

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NE73400

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

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NE68630-T1

California Eastern Laboratories (CEL)

RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, C Band, Silicon, NPN

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NE68530-T1

California Eastern Laboratories (CEL)

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NE02130-T1

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NE73416

California Eastern Laboratories (CEL)

RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN

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NE85639R-T1

California Eastern Laboratories (CEL)

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

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