Details
Manufacturer No 2N5313
Manufacturer Solitron Devices Inc
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
Price
Call
Type
Parameter
YTEOL
2
HTS Code
8541.29.00.95
Objectid
1415633822
ECCN Code
EAR99
Risk Rank
7.62
Rohs Code
No
VCEsat-Max
1.5 V
Pbfree Code
No
Subcategory
Other Transistors
JESD-30 Code
O-MUPM-D3
Configuration
SINGLE
JEDEC-95 Code
TO-61
Package Shape
ROUND
Package Style
POST/STUD MOUNT
Surface Mount
NO
Terminal Form
SOLDER LUG
Case Connection
COLLECTOR
Country Of Origin
USA
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
30
Operating Temperature-Max
175°C
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
80 V
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Power Dissipation Ambient-Max
50 W
Transition Frequency-Nom (fT)
30 MHz
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Qty
Unit Price
Total Price
10817
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