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2N1719
Details
Manufacturer No 2N1719
Manufacturer ON Semiconductor
Category Power Bipolar Transistors
Datasheet Datasheet
Description Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, NPN, Silicon, STR-10
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Type
Parameter
Objectid
1742528373
Risk Rank
9.15
Subcategory
Other Transistors
Configuration
Single
Surface Mount
NO
Package Description
STR-10
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
175°C
Collector Current-Max (IC)
0.75 A
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
100 V
Transition Frequency-Nom (fT)
16 MHz
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Qty
Unit Price
Total Price
1870
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2N1719
Solid State Devices Inc (SSDI)
Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, NPN, Silicon, STR-10
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API Technologies Corp
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General Diode Corp
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2N1719
Semicoa Semiconductors
Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, NPN, Silicon
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Semiconductor Technology Inc
Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, NPN, Silicon, STR-10
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Texas Instruments
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Semitronics Corp
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Swampscott Electronics Co Inc
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Hi-Tron Semiconductor Corp
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General Transistor Corp
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2N1719
ON Semiconductor
Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, NPN, Silicon, STR-10
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