2N1718

Details

Manufacturer No 2N1718

Manufacturer Texas Instruments

Category Power Bipolar Transistors

Datasheet Datasheet

Description 1A, 60V, NPN, Si, POWER TRANSISTOR

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Type

Parameter

Objectid

1440919640
ECCN Code

EAR99
Risk Rank

9.15
Subcategory

Other Transistors
JESD-30 Code

O-MUPM-W3
Configuration

SINGLE
Package Shape

ROUND
Package Style

POST/STUD MOUNT
Surface Mount

NO
Terminal Form

WIRE
Case Connection

COLLECTOR
Terminal Position

UPPER
Number of Elements

1
Source Content uid

2N1718
Number of Terminals

3
Package Description

POST/STUD MOUNT, O-MUPM-W3
Part Life Cycle Code

Obsolete
Qualification Status

Not Qualified
Package Body Material

METAL
Polarity/Channel Type

NPN
Reach Compliance Code

unknown
DC Current Gain-Min (hFE)

20
Operating Temperature-Max

175°C
Collector Current-Max (IC)

1 A
Power Dissipation-Max (Abs)

2 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

60 V
Transition Frequency-Nom (fT)

50 MHz

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Qty

Unit Price

Total Price

1868

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2N1718

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2N1718

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2N4075

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2N3745

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Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin,

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2N3748

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General Diode Corp

Small Signal Bipolar Transistor, 5A I(C), NPN

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2N3750

Semitronics Corp

Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN

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2N3746

Semitronics Corp

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN

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