ZX3CDBS1M832TA

Details

Manufacturer No ZX3CDBS1M832TA

Manufacturer Diodes Incorporated

Category Single BJT Transistors

Package 8-VDFN Exposed Pad

Datasheet Datasheet

Description

Price

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Type

Parameter

  • HTS

  • Tab

  • PPAP

  • RoHS

    yes

  • Type

  • Mount

    Surface Mount

  • Width

    2mm

  • Height

    1mm

  • Length

    3mm

  • Pbfree

  • Series

  • Weight

  • EU RoHS

  • hFE Min

  • Category

  • HTS Code

  • Material

  • Mounting

  • Polarity

    NPN

  • ECCN (US)

  • ECCN Code

    EAR99

  • Frequency

    140MHz

  • Inventory

    7208

  • Lead Free

    Lead Free

  • Packaging

    Tape & Reel (TR)

  • Pin Count

    10

  • Published

    2011

  • Automotive

  • Diode Type

  • REACH SVHC

  • PCB changed

  • Part Status

    Obsolete

  • Power - Max

  • RoHS Status

    ROHS3 Compliant

  • Subcategory

    Other Transistors

  • JESD-30 Code

  • Output Power

  • Package Type

  • Rad Hardened

  • Configuration

  • JESD-609 Code

    e3

  • Mounting Type

    Surface Mount

  • Package Width

  • Surface Mount

  • Terminal Form

    FLAT

  • Current Rating

  • Number of Pins

    832

  • Package / Case

    8-VDFN Exposed Pad

  • Package Length

  • Case Connection

    COLLECTOR

  • Contact Plating

  • DC Current Gain

  • Terminal Finish

    Matte Tin (Sn)

  • Transistor Type

    NPN + Diode (Isolated)

  • Base Part Number

    ZX3CDBS1M832

  • Lifecycle Status

  • Supplier Package

  • Factory Lead Time

  • Power Dissipation

    3W

  • Terminal Position

    QUAD

  • Additional Feature

  • Max Output Current

  • Number of Elements

    1

  • Output Current-Max

  • Voltage - Rated DC

  • Forward Voltage-Max

  • Radiation Hardening

  • Transistor Polarity

  • Emitter-Base Voltage

  • Operating Temp Range

  • Qualification Status

    Not Qualified

  • Transition Frequency

    140MHz

  • Element Configuration

    Single

  • Max Breakdown Voltage

    20V

  • Max Collector Current

    4.5A

  • Max Power Dissipation

    3W

  • Operating Temperature

    150°CTJ

  • Polarity/Channel Type

  • Reach Compliance Code

  • Collector Current (DC)

  • Collector-Base Voltage

  • Frequency - Transition

  • Gain Bandwidth Product

    140MHz

  • Number of Terminations

    10

  • Transistor Application

    SWITCHING

  • Minimum DC Current Gain

  • Supplier Device Package

  • Operating Supply Voltage

  • Reverse Recovery Time-Max

  • Rep Pk Reverse Voltage-Max

  • Emitter Base Voltage (VEBO)

    -7.5V

  • Number of Elements per Chip

  • Operating Temperature (Max)

  • Power Dissipation-Max (Abs)

  • Transistor Element Material

    SILICON

  • Continuous Collector Current

  • Collector Base Voltage (VCBO)

    40V

  • Peak Reflow Temperature (Cel)

    260

  • Vce Saturation (Max) @ Ib, Ic

    270mV @ 125mA, 4.5A

  • Current - Collector (Ic) (Max)

  • Maximum Power Dissipation (mW)

  • Non-rep Pk Forward Current-Max

  • Collector Emitter Voltage (VCEO)

    20V

  • Current - Collector Cutoff (Max)

    25nA

  • Maximum DC Collector Current (A)

  • Maximum Emitter Base Voltage (V)

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Maximum Collector Base Voltage (V)

  • Maximum Transition Frequency (MHz)

  • Collector Emitter Breakdown Voltage

    20V

  • Maximum Operating Temperature (°C)

  • Minimum Operating Temperature (°C)

  • Collector Emitter Saturation Voltage

  • Operating Temperature Classification

  • Time@Peak Reflow Temperature-Max (s)

    40

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    200 @ 2A 2V

  • Maximum Collector-Emitter Voltage (V)

  • Voltage - Collector Emitter Breakdown (Max)

  • Maximum Collector-Emitter Saturation Voltage (V)

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Qty

Unit Price

Total Price

7905

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