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VP2206N2-G

Details

Manufacturer No VP2206N2-G

Manufacturer Microchip Technology Inc

Category Small Signal Field-Effect Transistors

Datasheet Datasheet

Description SMALL SIGNAL, FET

Price

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Type

Parameter

  • YTEOL

    6

  • Objectid

    1155389049

  • ECCN Code

    EAR99

  • Risk Rank

    6.89

  • JESD-30 Code

    O-MBCY-W3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-39

  • Package Shape

    ROUND

  • Package Style

    CYLINDRICAL

  • Surface Mount

    NO

  • Terminal Form

    WIRE

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Country Of Origin

    Thailand

  • Terminal Position

    BOTTOM

  • Number of Elements

    1

  • Source Content uid

    VP2206N2-G

  • Number of Terminals

    3

  • Package Description

    CYLINDRICAL, O-MBCY-W3

  • Part Life Cycle Code

    Active

  • Package Body Material

    METAL

  • Polarity/Channel Type

    P-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    0.75 A

  • Transistor Application

    SWITCHING

  • Feedback Cap-Max (Crss)

    40 pF

  • DS Breakdown Voltage-Min

    60 V

  • Transistor Element Material

    SILICON

  • Drain-source On Resistance-Max

    0.9 Ω

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Qty

Unit Price

Total Price

3741

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VP2206N3-G

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VP2206N3-GP005

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VP2206N3-GP003

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VP2206N3-GP013

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VP2206N3-GP002

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VP2206N3

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Small Signal Field-Effect Transistor, 0.64A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92,

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