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TP2330F

Details

Manufacturer No TP2330F

Manufacturer Motorola Semiconductor Products

Category RF Power Bipolar Transistors

Datasheet Datasheet

Description RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

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Type

Parameter

  • HTS Code

    8541.29.00.75

  • Objectid

    1418806383

  • ECCN Code

    EAR99

  • Risk Rank

    8.56

  • JESD-30 Code

    O-CRFM-F4

  • Configuration

    SINGLE

  • Package Shape

    ROUND

  • Package Style

    FLANGE MOUNT

  • Surface Mount

    NO

  • Terminal Form

    FLAT

  • Terminal Position

    RADIAL

  • Additional Feature

    DIFFUSED BALLAST RESISTORS

  • Number of Elements

    1

  • Number of Terminals

    4

  • Power Gain-Min (Gp)

    9 dB

  • Part Life Cycle Code

    Obsolete

  • Qualification Status

    Not Qualified

  • Package Body Material

    CERAMIC, METAL-SEALED COFIRED

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Highest Frequency Band

    VERY HIGH FREQUENCY BAND

  • Transistor Application

    AMPLIFIER

  • DC Current Gain-Min (hFE)

    20

  • Operating Temperature-Max

    200°C

  • Collector Current-Max (IC)

    8 A

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    16 V

  • Power Dissipation Ambient-Max

    80 W

  • Collector-Base Capacitance-Max

    100 pF

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Qty

Unit Price

Total Price

2801

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