Details
Manufacturer No TK100E06N1
Manufacturer Toshiba
Category Single MOSFETs Transistors
Datasheet Datasheet
Description
Price
$0.0015
Type
Parameter
Mfr
RoHS
Mount
Height
Series
Weight
Package
FET Type
Inventory
18778
Packaging
Published
Rise Time
Vgs (Max)
Rds On Max
Resistance
Technology
Capacitance
FET Feature
Part Status
RoHS Status
Subcategory
Mounting Type
Number of Pins
Operating Mode
Package / Case
Product Status
Fall Time (Typ)
Factory Lead Time
Input Capacitance
Power Dissipation
Number of Channels
Turn On Delay Time
Vgs(th) (Max) @ Id
Capacitance - Input
Radiation Hardening
Turn-Off Delay Time
Element Configuration
Operating Temperature
Power Dissipation-Max
Reach Compliance Code
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Max Operating Temperature
Min Operating Temperature
Drain to Source Resistance
Gate Charge (Qg) (Max) @ Vgs
Gate to Source Voltage (Vgs)
Continuous Drain Current (ID)
Max Junction Temperature (Tj)
Drain to Source Voltage (Vdss)
Moisture Sensitivity Level (MSL)
Drain to Source Breakdown Voltage
Input Capacitance (Ciss) (Max) @ Vds
Drive Voltage (Max Rds On,Min Rds On)
Drive Voltage (Max Rds On, Min Rds On)
Current - Continuous Drain (Id) @ 25°C
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Qty
Unit Price
Total Price
1
$0.00146
$0.00146
50
$0.00138
$0.069
100
$0.00134
$0.134
1000
$0.00128
$1.28
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