STB120N4F6

Details

Manufacturer No STB120N4F6

Manufacturer STMicroelectronics

Category Power Field-Effect Transistors

Datasheet Datasheet

Description N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package

Price

$2.06

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Rohs Code

    Yes

  • Brand Name

    STMicroelectronics

  • Popularity

    800

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-263AB

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Factory Lead Time

    52 weeks

  • Part Package Code

    D2PAK

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Source Content uid

    STB120N4F6

  • Number of Terminals

    2

  • Package Description

    TO-263, D2PAK-3

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    not_compliant

  • Drain Current-Max (ID)

    80 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    40 V

  • Operating Temperature-Max

    175°C

  • Moisture Sensitivity Level

    1

  • Power Dissipation-Max (Abs)

    110 W

  • Transistor Element Material

    SILICON

  • Avalanche Energy Rating (Eas)

    394 mJ

  • Peak Reflow Temperature (Cel)

    245

  • Drain-source On Resistance-Max

    0.004 Ω

  • Pulsed Drain Current-Max (IDM)

    320 A

  • Time@Peak Reflow Temperature-Max (s)

    30

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Qty

Unit Price

Total Price

1

$1.9982

$1.9982

50

$1.8952

$94.76

100

$1.8334

$183.34

1000

$1.751

$1751

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