SPP21N50C3HKSA1

Details

Manufacturer No SPP21N50C3HKSA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package TO-220-3

Datasheet Datasheet

Description MOSFET N-CH 560V 21A TO220-3

Price

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Type

Parameter

  • Mfr

    Infineon Technologies

  • Series

    CoolMOS™

  • Package

    Tube

  • FET Type

    N-Channel

  • Vgs (Max)

    ±20V

  • Technology

    MOSFET (Metal Oxide)

  • FET Feature

    -

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Product Status

    Obsolete

  • Vgs(th) (Max) @ Id

    3.9V @ 1mA

  • Base Product Number

    SPP21N

  • Operating Temperature

    -55°C~150°C(TJ)

  • Rds On (Max) @ Id, Vgs

    190mOhm @ 13.1A, 10V

  • Power Dissipation (Max)

    208W (Tc)

  • Supplier Device Package

    PG-TO220-3-1

  • Gate Charge (Qg) (Max) @ Vgs

    95 nC @ 10 V

  • Drain to Source Voltage (Vdss)

    560 V

  • Input Capacitance (Ciss) (Max) @ Vds

    2400 pF @ 25 V

  • Drive Voltage (Max Rds On, Min Rds On)

    10V

  • Current - Continuous Drain (Id) @ 25°C

    21A (Tc)

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Qty

Unit Price

Total Price

46615

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Substitute Products

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Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2

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SIHP20N50E-GE3

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SPB21N50C3

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SPB21N50C3ATMA1

Infineon Technologies AG

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APT5019HLL

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Q67040-S4566

Infineon Technologies AG

Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN

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SPW21N50C3FKSA1

Infineon Technologies AG

Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

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SPW21N50C3

Infineon Technologies AG

Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

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