SPP11N60S5HKSA1

Details

Manufacturer No SPP11N60S5HKSA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package TO-220-3

Datasheet Datasheet

Description MOSFET N-CH 650V 11A TO220-3

Price

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Type

Parameter

Mfr

Infineon Technologies
Series

CoolMOS™
Package

Tube
FET Type

N-Channel
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
FET Feature

-
Mounting Type

Through Hole
Package / Case

TO-220-3
Product Status

Obsolete
Vgs(th) (Max) @ Id

5.5V @ 500µA
Base Product Number

SPP11N
Operating Temperature

-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V
Power Dissipation (Max)

125W (Tc)
Supplier Device Package

PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs

54 nC @ 10 V
Drain to Source Voltage (Vdss)

650 V
Input Capacitance (Ciss) (Max) @ Vds

1460 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)

10V
Current - Continuous Drain (Id) @ 25°C

11A (Tc)

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Qty

Unit Price

Total Price

3116

call

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