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SPB17N80C3

Details

Manufacturer No SPB17N80C3

Manufacturer Infineon Technologies

Category MOSFET

Package TO-263-3

Datasheet Datasheet

Description MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3

Price

$5.2

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Type

Parameter

  • RoHS

    Details

  • Brand

    Infineon Technologies

  • Width

    9.25 mm

  • Height

    4.4 mm

  • Length

    10 mm

  • Series

    CoolMOS C3

  • Fall Time

    12 ns

  • Packaging

    MouseReel

  • Rise Time

    15 ns

  • Tradename

    CoolMOS

  • Technology

    Si

  • Subcategory

    MOSFETs

  • Unit Weight

    0.139332 oz

  • Channel Mode

    Enhancement

  • Manufacturer

    Infineon

  • Product Type

    MOSFET

  • Configuration

    Single

  • Mounting Style

    SMD/SMT

  • Package / Case

    TO-263-3

  • Part # Aliases

    SP000013370 SPB17N8C3XT SPB17N80C3ATMA1

  • Transistor Type

    1 N-Channel

  • Product Category

    MOSFET

  • Qg - Gate Charge

    88 nC

  • Number of Channels

    1 Channel

  • Transistor Polarity

    N-Channel

  • Pd - Power Dissipation

    227 W

  • Vgs - Gate-Source Voltage

    - 20 V, + 20 V

  • Typical Turn-On Delay Time

    25 ns

  • Typical Turn-Off Delay Time

    72 ns

  • Id - Continuous Drain Current

    17 A

  • Maximum Operating Temperature

    150°C

  • Minimum Operating Temperature

    -55°C

  • Rds On - Drain-Source Resistance

    290 mOhms

  • Vds - Drain-Source Breakdown Voltage

    800 V

  • Vgs th - Gate-Source Threshold Voltage

    2.1 V

  • Factory Pack Quantity: Factory Pack Quantity

    1000

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Qty

Unit Price

Total Price

1

$5.044

$5.044

50

$4.784

$239.2

100

$4.628

$462.8

1000

$4.42

$4420

Substitute Products

SPW17N80C3FKSA1

Infineon Technologies AG

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3

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STB18NM80

STMicroelectronics

N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package

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APT17N80SC3G

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Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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SPP17N80C3XKSA1

Infineon Technologies AG

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

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SPA17N80C3

Infineon Technologies AG

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3

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STB18NM80

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APT17N80SC3

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N-CH 800V 17A

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STB11NM80T4

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