SIHF540STRR-GE3

Details

Manufacturer No SIHF540STRR-GE3

Manufacturer Vishay Siliconix

Category Power Field-Effect Transistors

Datasheet Datasheet

Description TRANSISTOR 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Rohs Code

    Yes

  • Popularity

    0

  • Pbfree Code

    Yes

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-PSSO-G2

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    TO-263AB

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Part Package Code

    D2PAK

  • Terminal Position

    SINGLE

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    1

  • Number of Terminals

    2

  • Package Description

    SMALL OUTLINE, R-PSSO-G2

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    unknown

  • Drain Current-Max (ID)

    28 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    100 V

  • Operating Temperature-Max

    175°C

  • Power Dissipation-Max (Abs)

    150 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    28 A

  • Avalanche Energy Rating (Eas)

    230 mJ

  • Peak Reflow Temperature (Cel)

    260

  • Drain-source On Resistance-Max

    0.077 Ω

  • Pulsed Drain Current-Max (IDM)

    110 A

  • Time@Peak Reflow Temperature-Max (s)

    40

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