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SIHB12N65E-GE3
Details
Manufacturer No SIHB12N65E-GE3
Manufacturer Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single
Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet Datasheet
Description MOSFET N-CH 650V 12A D2PAK
Price
$2.99
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Type
Parameter
Mfr
Vishay Siliconix
Series
-
Package
Tube
FET Type
N-Channel
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status
Active
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
SIHB12
Operating Temperature
-55°C~150°C(TJ)
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Power Dissipation (Max)
156W (Tc)
Supplier Device Package
D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
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Qty
Unit Price
Total Price
1
$2.9003
$2.9003
50
$2.7508
$137.54
100
$2.6611
$266.11
1000
$2.5415
$2541.5
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