SFF250

Details

Manufacturer No SFF250

Manufacturer Solid State Devices Inc (SSDI)

Category Power Field-Effect Transistors

Datasheet Datasheet

Description Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, MILPACK-3

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Popularity

    0

  • Subcategory

    FET General Purpose Power

  • JESD-30 Code

    R-CBCC-N3

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Package Shape

    RECTANGULAR

  • Package Style

    CHIP CARRIER

  • Surface Mount

    YES

  • Terminal Form

    NO LEAD

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Position

    BOTTOM

  • Number of Elements

    1

  • Number of Terminals

    3

  • Package Description

    CHIP CARRIER, R-CBCC-N3

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    CERAMIC, METAL-SEALED COFIRED

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    30 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    200 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    125 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    30 A

  • Drain-source On Resistance-Max

    0.085 Ω

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Qty

Unit Price

Total Price

10096

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IRFB31N20D

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Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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2N7302

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IRFB30N20DPBF

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IRFB31N20DPBF

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