SDT85505

Details

Manufacturer No SDT85505

Manufacturer Solitron Devices Inc

Category Power Bipolar Transistors

Datasheet Datasheet

Description Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin,

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Type

Parameter

YTEOL

2
HTS Code

8541.29.00.75
Objectid

1415636504
ECCN Code

EAR99
Risk Rank

7.97
Rohs Code

No
VCEsat-Max

0.6 V
Pbfree Code

No
Subcategory

Other Transistors
JESD-30 Code

O-MBCY-W3
Configuration

SINGLE
JEDEC-95 Code

TO-39
Package Shape

ROUND
Package Style

CYLINDRICAL
Surface Mount

NO
Terminal Form

WIRE
Case Connection

COLLECTOR
Country Of Origin

USA
Terminal Position

BOTTOM
Number of Elements

1
Number of Terminals

3
Part Life Cycle Code

Active
Qualification Status

Not Qualified
Package Body Material

METAL
Polarity/Channel Type

NPN
Reach Compliance Code

unknown
Transistor Application

SWITCHING
DC Current Gain-Min (hFE)

40
Operating Temperature-Max

175°C
Collector Current-Max (IC)

5 A
Power Dissipation-Max (Abs)

9 W
Transistor Element Material

SILICON
Collector-Emitter Voltage-Max

150 V
Peak Reflow Temperature (Cel)

NOTSPECIFIED
Power Dissipation Ambient-Max

9 W
Transition Frequency-Nom (fT)

40 MHz
Time@Peak Reflow Temperature-Max (s)

NOTSPECIFIED

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Qty

Unit Price

Total Price

10556

call

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