SBC857CDW1T1G

Details

Manufacturer No SBC857CDW1T1G

Manufacturer onsemi

Category Bipolar Transistors - BJT

Package SOT-363-6

Datasheet Datasheet

Description Bipolar Transistors - BJT SS GP XSTR PNP 45V

Price

$0.46

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Type

Parameter

  • RoHS

    Details

  • Brand

    onsemi

  • Series

    BC856B

  • Packaging

    MouseReel

  • Technology

    Si

  • Subcategory

    Transistors

  • Unit Weight

    0.000265 oz

  • Manufacturer

    onsemi

  • Product Type

    BJTs - Bipolar Transistors

  • Configuration

    Dual

  • Qualification

    AEC-Q101

  • Mounting Style

    SMD/SMT

  • Package / Case

    SOT-363-6

  • Product Category

    Bipolar Transistors - BJT

  • Transistor Polarity

    PNP

  • Pd - Power Dissipation

    380 mW

  • DC Current Gain hFE Max

    475

  • Gain Bandwidth Product fT

    100 MHz

  • Emitter- Base Voltage VEBO

    5 V

  • Collector- Base Voltage VCBO

    50 V

  • Continuous Collector Current

    - 100 mA

  • Maximum DC Collector Current

    100 mA

  • Maximum Operating Temperature

    150°C

  • Minimum Operating Temperature

    -55°C

  • DC Collector/Base Gain hfe Min

    220

  • Collector- Emitter Voltage VCEO Max

    45 V

  • Collector-Emitter Saturation Voltage

    650 mV

  • Factory Pack Quantity: Factory Pack Quantity

    3000

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Qty

Unit Price

Total Price

1

$0.4462

$0.4462

50

$0.4232

$21.16

100

$0.4094

$40.94

1000

$0.391

$391

Substitute Products

MMDT3906-7-F

Diodes Incorporated

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DMMT3906W-7-F

Diodes Incorporated

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BC857SH6327XTSA1

Infineon Technologies

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