Details
Manufacturer No RO2731B50W
Manufacturer NXP Semiconductors
Category RF Power Bipolar Transistors
Datasheet Datasheet
Description TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power
Price
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Type
Parameter
Objectid
1440920460
ECCN Code
EAR99
Risk Rank
9.45
Subcategory
Other Transistors
JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
YES
Terminal Form
FLAT
Case Connection
BASE
Terminal Position
DUAL
Number of Elements
1
Source Content uid
RO2731B50W
Number of Terminals
2
Part Life Cycle Code
Obsolete
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Reach Compliance Code
compliant
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
200°C
Collector Current-Max (IC)
6.5 A
Power Dissipation-Max (Abs)
190 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
25 V
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Qty
Unit Price
Total Price
2747
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