RN1911FETE85LF

Details

Manufacturer No RN1911FETE85LF

Manufacturer Toshiba Semiconductor and Storage

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package SOT-563, SOT-666

Datasheet Datasheet

Description TRANS 2NPN PREBIAS 0.1W ES6

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Type

Parameter

Mfr

Toshiba Semiconductor and Storage
Series

-
Package

Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Power - Max

100mW
Mounting Type

Surface Mount
Package / Case

SOT-563, SOT-666
Product Status

Active
Transistor Type

2 NPN - Pre-Biased (Dual)
Base Product Number

RN1911
Resistor - Base (R1)

10kOhms
Frequency - Transition

250MHz
Supplier Device Package

ES6
Resistor - Emitter Base (R2)

-
Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)

100mA
Current - Collector Cutoff (Max)

100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)

50V

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Qty

Unit Price

Total Price

1978

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