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RN1118FV

Details

Manufacturer No RN1118FV

Manufacturer Toshiba America Electronic Components

Category Small Signal Bipolar Transistors

Datasheet Datasheet

Description TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal

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Type

Parameter

  • YTEOL

    7.5

  • Objectid

    2056189459

  • ECCN Code

    EAR99

  • Pin Count

    3

  • Risk Rank

    7.63

  • Subcategory

    BIP General Purpose Small Signal

  • JESD-30 Code

    R-PDSO-F3

  • Configuration

    SINGLE WITH BUILT-IN RESISTOR

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    FLAT

  • Terminal Position

    DUAL

  • Additional Feature

    BUILT-IN BIAS RESISTOR RATIO IS 0.21

  • Number of Elements

    1

  • Source Content uid

    RN1118FV

  • Number of Terminals

    3

  • Package Description

    SMALL OUTLINE, R-PDSO-F3

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    NPN

  • Reach Compliance Code

    unknown

  • Transistor Application

    SWITCHING

  • DC Current Gain-Min (hFE)

    50

  • Operating Temperature-Max

    150°C

  • Collector Current-Max (IC)

    0.1 A

  • Power Dissipation-Max (Abs)

    0.15 W

  • Transistor Element Material

    SILICON

  • Collector-Emitter Voltage-Max

    50 V

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Transition Frequency-Nom (fT)

    250 MHz

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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Qty

Unit Price

Total Price

832

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