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RN1108FV
Details
Manufacturer No RN1108FV
Manufacturer Toshiba America Electronic Components
Category Small Signal Bipolar Transistors
Datasheet Datasheet
Description TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP General Purpose Small Signal
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Type
Parameter
YTEOL
2
Objectid
2056189434
ECCN Code
EAR99
Pin Count
3
Risk Rank
7.61
Subcategory
BIP General Purpose Small Signal
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR
Number of Elements
1
Source Content uid
RN1108FV
Number of Terminals
3
Package Description
SMALL OUTLINE, R-PDSO-F3
Part Life Cycle Code
Active
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Reach Compliance Code
unknown
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
80
Operating Temperature-Max
150°C
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON
Collector-Emitter Voltage-Max
50 V
Transition Frequency-Nom (fT)
250 MHz
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Unit Price
Total Price
775
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