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RJM0306JSP-00-J0

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Manufacturer No RJM0306JSP-00-J0

Manufacturer Renesas Electronics Corporation

Category Power Field-Effect Transistors

Datasheet Datasheet

Description 3.5A, 30V, 4 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, 4.90 X 3.95 MM, SOP-8

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Type

Parameter

  • YTEOL

    5

  • Objectid

    1876608594

  • ECCN Code

    EAR99

  • Pin Count

    8

  • Risk Rank

    7.29

  • Rohs Code

    Yes

  • Pbfree Code

    Yes

  • Subcategory

    Other Transistors

  • JESD-30 Code

    R-PDSO-G8

  • Configuration

    BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Part Package Code

    SOT

  • Terminal Position

    DUAL

  • Additional Feature

    AVALANCHE RATED

  • Number of Elements

    4

  • Source Content uid

    RJM0306JSP-00-J0

  • Number of Terminals

    8

  • Package Description

    SMALL OUTLINE, R-PDSO-G8

  • Part Life Cycle Code

    Active

  • Qualification Status

    Not Qualified

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL AND P-CHANNEL

  • Reach Compliance Code

    compliant

  • Drain Current-Max (ID)

    3.5 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    30 V

  • Operating Temperature-Max

    150°C

  • Power Dissipation-Max (Abs)

    2.2 W

  • Transistor Element Material

    SILICON

  • Drain Current-Max (Abs) (ID)

    3.5 A

  • Peak Reflow Temperature (Cel)

    NOTSPECIFIED

  • Pulsed Drain Current-Max (IDM)

    28 A

  • Time@Peak Reflow Temperature-Max (s)

    NOTSPECIFIED

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Qty

Unit Price

Total Price

4683

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call

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