Details
Manufacturer No RFD16N02LSM9A
Manufacturer HARRIS SEMICONDUCTOR
Category Unclassified
Datasheet Datasheet
Description
Price
Call
Type
Parameter
RoHS
Pbfree
ECCN Code
EAR99
Inventory
In Stock
Packaging
Pin Count
RoHS Status
Subcategory
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
JESD-609 Code
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Package / Case
Case Connection
DRAIN
Terminal Finish
Terminal Position
SINGLE
Additional Feature
MEGAFET, LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
Transistor Application
SWITCHING
Turn On Time-Max (ton)
DS Breakdown Voltage-Min
20V
Turn Off Time-Max (toff)
Operating Temperature (Max)
Power Dissipation-Max (Abs)
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
16A
Peak Reflow Temperature (Cel)
Power Dissipation Ambient-Max
Drain-source On Resistance-Max
0.022Ohm
Pulsed Drain Current-Max (IDM)
Moisture Sensitivity Level (MSL)
Time@Peak Reflow Temperature-Max (s)
Send RFQ
Qty
Unit Price
Total Price
14873
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