PSMN026-80YS,115

Details

Manufacturer No PSMN026-80YS,115

Manufacturer NXP

Category Power Field-Effect Transistors

Datasheet Datasheet

Description PSMN026-80YS - N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET SOIC 4-Pin

Price

$0.63

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Type

Parameter

  • ECCN Code

    EAR99

  • Pin Count

    4

  • Rohs Code

    Yes

  • Brand Name

    NXP Semiconductor

  • Popularity

    533

  • JESD-30 Code

    R-PSSO-G4

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code

    MO-235

  • JESD-609 Code

    e3

  • Package Shape

    RECTANGULAR

  • Package Style

    SMALL OUTLINE

  • Surface Mount

    YES

  • Terminal Form

    GULL WING

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Terminal Finish

    TIN

  • Part Package Code

    SOIC

  • Terminal Position

    SINGLE

  • Number of Elements

    1

  • Reference Standard

    IEC-60134

  • Source Content uid

    PSMN026-80YS,115

  • Number of Terminals

    4

  • Package Description

    PLASTIC, LFPAK-4

  • Part Life Cycle Code

    Transferred

  • Package Body Material

    PLASTIC/EPOXY

  • Polarity/Channel Type

    N-CHANNEL

  • Reach Compliance Code

    not_compliant

  • Drain Current-Max (ID)

    34 A

  • Transistor Application

    SWITCHING

  • DS Breakdown Voltage-Min

    80 V

  • Manufacturer Package Code

    SOT669

  • Moisture Sensitivity Level

    1

  • Transistor Element Material

    SILICON

  • Source Url Status Check Date

    2013-06-14 00:00:00

  • Avalanche Energy Rating (Eas)

    32 mJ

  • Peak Reflow Temperature (Cel)

    260

  • Drain-source On Resistance-Max

    0.0275 Ω

  • Pulsed Drain Current-Max (IDM)

    137 A

  • Time@Peak Reflow Temperature-Max (s)

    30

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Qty

Unit Price

Total Price

1

$0.6111

$0.6111

50

$0.5796

$28.98

100

$0.5607

$56.07

1000

$0.5355

$535.5

Substitute Products

SIJ478DP-T1-GE3

Vishay

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