Details
Manufacturer No PSMN026-80YS,115
Manufacturer NXP
Category Power Field-Effect Transistors
Datasheet Datasheet
Description PSMN026-80YS - N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET SOIC 4-Pin
Price
$0.63
Type
Parameter
ECCN Code
EAR99
Pin Count
4
Rohs Code
Yes
Brand Name
NXP Semiconductor
Popularity
533
JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-235
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Part Package Code
SOIC
Terminal Position
SINGLE
Number of Elements
1
Reference Standard
IEC-60134
Source Content uid
PSMN026-80YS,115
Number of Terminals
4
Package Description
PLASTIC, LFPAK-4
Part Life Cycle Code
Transferred
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
not_compliant
Drain Current-Max (ID)
34 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
80 V
Manufacturer Package Code
SOT669
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Source Url Status Check Date
2013-06-14 00:00:00
Avalanche Energy Rating (Eas)
32 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.0275 Ω
Pulsed Drain Current-Max (IDM)
137 A
Time@Peak Reflow Temperature-Max (s)
30
Send RFQ
Qty
Unit Price
Total Price
1
$0.6111
$0.6111
50
$0.5796
$28.98
100
$0.5607
$56.07
1000
$0.5355
$535.5
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