Details
Manufacturer No PMST5401,115
Manufacturer NXP USA Inc.
Category Single BJT Transistors
Package SC-70, SOT-323
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Series
hFE Min
HTS Code
8541.21.00.95
ECCN Code
EAR99
Frequency
Inventory
16625
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
Published
1999
VCEsat-Max
0.5 V
Part Status
Obsolete
Power - Max
200mW
RoHS Status
ROHS3 Compliant
Subcategory
Other Transistors
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JESD-609 Code
e3
Max Frequency
Mounting Type
Surface Mount
Surface Mount
YES
Terminal Form
GULL WING
Number of Pins
Package / Case
SC-70, SOT-323
Contact Plating
Terminal Finish
TIN
Transistor Type
PNP
Base Part Number
Factory Lead Time
Power Dissipation
Terminal Position
DUAL
Number of Elements
1
Radiation Hardening
Qualification Status
Not Qualified
Transition Frequency
100MHz
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Operating Temperature
150°CTJ
Polarity/Channel Type
PNP
Reach Compliance Code
unknown
Frequency - Transition
300MHz
Gain Bandwidth Product
Number of Terminations
3
Transistor Application
Turn On Time-Max (ton)
Supplier Device Package
Turn Off Time-Max (toff)
Emitter Base Voltage (VEBO)
Power Dissipation-Max (Abs)
0.2W
Transistor Element Material
SILICON
Collector Base Voltage (VCBO)
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector-Base Capacitance-Max
6pF
Current - Collector (Ic) (Max)
300mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
50nA ICBO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Voltage - Collector Emitter Breakdown (Max)
150V
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Qty
Unit Price
Total Price
23544
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