PHE13009,127

Details

Manufacturer No PHE13009,127

Manufacturer WeEn Semiconductors

Category Transistors - Bipolar (BJT) - Single

Package TO-220-3

Datasheet Datasheet

Description TRANS NPN 400V 12A TO220AB

Price

$0.32265

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Type

Parameter

  • Mfr

    WeEn Semiconductors

  • Series

    -

  • Package

    Tube

  • Power - Max

    80 W

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Product Status

    Active

  • Transistor Type

    NPN

  • Base Product Number

    PHE13

  • Operating Temperature

    150°C(TJ)

  • Frequency - Transition

    -

  • Supplier Device Package

    TO-220AB

  • Vce Saturation (Max) @ Ib, Ic

    2V @ 1.6A, 8A

  • Current - Collector (Ic) (Max)

    12 A

  • Current - Collector Cutoff (Max)

    100µA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    8 @ 5A, 5V

  • Voltage - Collector Emitter Breakdown (Max)

    400 V

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Qty

Unit Price

Total Price

1

$0.31297

$0.31297

50

$0.29684

$14.842

100

$0.28716

$28.716

1000

$0.27425

$274.25

Substitute Products

FJP13009TU

onsemi

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ST13009

STMicroelectronics

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ST13007D

STMicroelectronics

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MJE13007G

Rochester Electronics, LLC

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934055576127

WeEn Semiconductor Co Ltd

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220AB, 3 PIN

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PHE13009,127

NXP Semiconductors

PHE13009

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PHE13009

Philips

Silicon Diffused Power Transistor

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PHE13009/DG,127

We En Semiconductor

TO-220AB NPN 400V 12A

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MJE13009G

ON Semiconductor

TO-220AB NPN 400V 12A

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FJP13009

Fairchild

Trans GP BJT NPN 400V 12A 3Pin(3+Tab) TO-220AB Bulk

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