Details
Manufacturer No PDTC115TS,126
Manufacturer NXP USA Inc.
Category Pre-Biased BJT Transistors
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Width
Height
Length
Weight
hFE Min
HTS Code
Polarity
ECCN Code
Inventory
8469
Lead Free
Packaging
Tape & Box (TB)
Pin Count
Published
2005
REACH SVHC
Part Status
Obsolete
Power - Max
500mW
RoHS Status
ROHS3 Compliant
Subcategory
JESD-30 Code
Configuration
JESD-609 Code
Mounting Type
Through Hole
Surface Mount
Terminal Form
Number of Pins
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Case Connection
Terminal Finish
Transistor Type
NPN - Pre-Biased
Base Part Number
PDTC115
Factory Lead Time
Terminal Position
Additional Feature
Max Output Current
Number of Elements
Radiation Hardening
Qualification Status
Resistor - Base (R1)
100 k Ω
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Polarity/Channel Type
Reach Compliance Code
Number of Terminations
Transistor Application
Supplier Device Package
Operating Supply Voltage
Max Operating Temperature
Min Operating Temperature
Operating Temperature (Max)
Power Dissipation-Max (Abs)
Transistor Element Material
Resistor - Emitter Base (R2)
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
150mV @ 250μA, 5mA
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
1μA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 5V
Voltage - Collector Emitter Breakdown (Max)
50V
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Qty
Unit Price
Total Price
38518
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