Details
Manufacturer No PDTA143EEF,115
Manufacturer NXP USA Inc.
Category Pre-Biased BJT Transistors
Package SC-89, SOT-490
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Width
Height
Length
Series
HTS Code
ECCN Code
EAR99
Inventory
6316
Packaging
Tape & Reel (TR)
Pin Count
3
Published
2004
Part Status
Obsolete
Power - Max
250mW
RoHS Status
ROHS3 Compliant
Subcategory
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN RESISTOR
JEDEC-95 Code
JESD-609 Code
e3
Mounting Type
Surface Mount
Surface Mount
YES
Terminal Form
FLAT
Number of Pins
Package / Case
SC-89, SOT-490
Terminal Finish
TIN
Transistor Type
PNP - Pre-Biased
Base Part Number
PDTA143
Factory Lead Time
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Number of Elements
1
Qualification Status
Not Qualified
Resistor - Base (R1)
4.7 k Ω
Transition Frequency
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Polarity/Channel Type
PNP
Reach Compliance Code
unknown
Frequency - Transition
Number of Terminations
3
Transistor Application
SWITCHING
Supplier Device Package
DC Current Gain-Min (hFE)
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
Operating Temperature (Max)
150°C
Power Dissipation-Max (Abs)
Transistor Element Material
SILICON
Resistor - Emitter Base (R2)
4.7 k Ω
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
150mV @ 500μA, 10mA
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
1μA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 5V
Voltage - Collector Emitter Breakdown (Max)
50V
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Qty
Unit Price
Total Price
17002
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