Details
Manufacturer No PDTA123JS,126
Manufacturer NXP USA Inc.
Category Pre-Biased BJT Transistors
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet Datasheet
Description
Price
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Type
Parameter
RoHS
yes
Mount
Width
Height
Length
Pbfree
hFE Min
HTS Code
Polarity
ECCN Code
Inventory
8726
Lead Free
Packaging
Tape & Box (TB)
Pin Count
Published
2009
Part Status
Obsolete
Power - Max
500mW
RoHS Status
ROHS3 Compliant
Subcategory
Halogen Free
JESD-30 Code
JESD-609 Code
Mounting Type
Through Hole
Surface Mount
Terminal Form
Current Rating
Number of Pins
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Terminal Finish
Transistor Type
PNP - Pre-Biased
Base Part Number
PDTA123
Lifecycle Status
Factory Lead Time
Power Dissipation
Terminal Position
Additional Feature
Number of Elements
Voltage - Rated DC
Radiation Hardening
Resistor - Base (R1)
2.2 kOhms
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Reach Compliance Code
Number of Terminations
Transistor Application
Supplier Device Package
TO-92-3
Max Operating Temperature
Min Operating Temperature
Emitter Base Voltage (VEBO)
Transistor Element Material
Continuous Collector Current
Resistor - Emitter Base (R2)
47 kOhms
Peak Reflow Temperature (Cel)
Vce Saturation (Max) @ Ib, Ic
100mV @ 250μA, 5mA
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
1μA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 5V
Voltage - Collector Emitter Breakdown (Max)
50V
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Unit Price
Total Price
17021
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